| PART |
Description |
Maker |
| IRKD56 IRKD56_04A IRKD56_06A IRKD56_08A IRKD56_10A |
ADD-A-pak GEN V Power Modules 地址给柏V电源模块
ADD-A-pak GEN V Power Modules 地址给柏根V电源模块
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:16; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 地址给柏根V电源模块
(IRKJ56 / IRKJ71) ADD-A-pak GEN V Power Modules
800V Common Cathode in a ADD-A-Pak package
800V Doubler in a ADD-A-Pak package
800V Single Diode in a ADD-A-Pak package
1600V Common Cathode in a ADD-A-Pak package
1600V Doubler in a ADD-A-Pak package
1600V Single Diode in a ADD-A-Pak package
1600V Common Anode in a ADD-A-Pak package
1200V Common Cathode in a ADD-A-Pak package
1400V Common Cathode in a ADD-A-Pak package
1000V Common Cathode in a ADD-A-Pak package
800V Common Anode in a ADD-A-Pak package
1200V Doubler in a ADD-A-Pak package
1200V Single Diode in a ADD-A-Pak package
1000V Doubler in a ADD-A-Pak package
1200V Common Anode in a ADD-A-Pak package
1400V Doubler in a ADD-A-Pak package
1400V Single Diode in a ADD-A-Pak package
1400V Common Anode in a ADD-A-Pak package
1000V Single Diode in a ADD-A-Pak package
1000V Common Anode in a ADD-A-Pak package
ADD-A-pak GEN V Power Modules
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| RM75TC-24 RM75TC-M RM75TC-2H RM75TC-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| IRK26 |
ADD-A-pak-TM GEN V Power Modules
|
International Rectifier
|
| IRKD56 IRKE71 IRKJ56 |
(IRKxxx) ADD-A-pak GEN V Power Modules
|
International Rectifier
|
| RM100CZ-24 RM100DZ-24 RM100CZ-2H RM100DZ-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM15TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM10TA-2H RM10TA-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDO500 MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500- |
High Power Diode Modules
High Power Diode Modules 560 A, 1400 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 大功率二极管模块
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| W83194BR-312 W83194BR-63S W83194BR-39A W83195AR-S |
Step-less VIA (tm) KT-266 main clock gen
Step-less Frequency SiS 630S, Clock Gen., with S.S.T.
Step-less Frequency VIA PC133, Intel BX Clock Gen., with S.S.T.
200MHz Solano 815 Clock Gen., 3-DIMM, with S.S.T.
200MHz Solano 815 Clock Gen., 2-DIMM, with S.S.T.
IPMI BMC plus hardware monitor and five sets I2C Master/Slave SMBus
Step-less Intel (tm) 845 main clock gen
Step-less Freqency SiS 730S, Clock Gen.,with S.S.T
Notebook integrated LPC I/O controller, flash interface, ISA KBC interface and W83877A
MDPCM Voice/Melody w/40x8 ~ 16x4 LCD, 80x4 LCD RAM, 1/4&1/8 Duty, 1/3&1/4 Bias, 16Kx20 ROM, 896*4 RA
W83877TF plus KBC, CIR, RTC
|
Winbond Electronics
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
